EE 305 HW#9 - ECE 305 Homework #9 Due Monday, April 19...

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ECE 305 Homework #9 Due Monday, April 19 Problem 1: The electron and hole currents in a BJT biased in the forward-active mode are illustrated below. (A) Determine the emitter current. (B) Determine the base current. (C) Determine the base transport factor (D) Determine the emitter injection efficiency (E) Determine the beta of the transistor Problem 2: Two silicon pnp transistors, BJT1 and BJT2, are identical except W B1 W B2 . Also, N AE N DB N AC and W << L pB . Under the same active mode biasing conditions, which transistor will exhibit (a) the larger emitter injection efficiency and why? (b) the larger base transport factor and why? (c) the larger B and why? (d) the greater sensitivity to base-width modulation and why? If the breakdown is due to avalanching, which transistor will exhibit (e) the larger V CBO and why? (f) the larger V CEO and why? 0.998 A 0.99 A 0.001 A 0.002 A E C B
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Problem 3
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This note was uploaded on 03/25/2011 for the course ECE 305 taught by Professor Melloch during the Spring '08 term at Purdue University-West Lafayette.

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EE 305 HW#9 - ECE 305 Homework #9 Due Monday, April 19...

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