EE 305 HW#10 - ECE 305 Homework #10 Due Friday, April 30...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 305 Homework #10 Due Friday, April 30 Problem 1: Consider a MOS capacitor, in which the semiconductor is grounded and a bias is applied to the gate. We measure the C-V relationship shown below. a) is the semiconductor n-type or p-type? b) is the MOS structure “ideal”? (i.e. is the sample flat-band at zero bias?) c) find the oxide thickness, assuming that the capacitor has an area of 0.01 cm 2 . It may be helpful to remember that Si has a relative dielectric constant of 12.1 and that SiO 2 has a relative dielectric constant of 3.9. d) the curve shown is for a “high frequency” measurement. Briefly explain how the curve would change is we made a low-frequency measurement. Problem 2: Suppose that we have a metal/oxide/(p-silicon) structure in which the semiconductor is doped at N A = 1x10 17 cm -3 , the oxide thickness is 10 nm and T=300K. The structure is ideal, which implies that flat-band conditions would occur at zero-bias. We start the analysis with a bias applied to the device which brings us to the onset of inversion. Note that the
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 03/25/2011 for the course ECE 305 taught by Professor Melloch during the Spring '08 term at Purdue University-West Lafayette.

Page1 / 2

EE 305 HW#10 - ECE 305 Homework #10 Due Friday, April 30...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online