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EE 305 HW#10

# EE 305 HW#10 - ECE 305 Homework#10 Due Friday April 30...

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ECE 305 Homework #10 Due Friday, April 30 Problem 1: Consider a MOS capacitor, in which the semiconductor is grounded and a bias is applied to the gate. We measure the C-V relationship shown below. a) is the semiconductor n-type or p-type? b) is the MOS structure “ideal”? (i.e. is the sample flat-band at zero bias?) c) find the oxide thickness, assuming that the capacitor has an area of 0.01 cm 2 . It may be helpful to remember that Si has a relative dielectric constant of 12.1 and that SiO 2 has a relative dielectric constant of 3.9. d) the curve shown is for a “high frequency” measurement. Briefly explain how the curve would change is we made a low-frequency measurement. Problem 2: Suppose that we have a metal/oxide/(p-silicon) structure in which the semiconductor is doped at N A = 1x10 17 cm -3 , the oxide thickness is 10 nm and T=300K. The structure is ideal, which implies that flat-band conditions would occur at zero-bias. We start the analysis with a bias applied to the device which brings us to the onset of inversion. Note that the

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EE 305 HW#10 - ECE 305 Homework#10 Due Friday April 30...

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