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Unformatted text preview: I B ,I C , I E in terms of device structure, bias ECE 305 – a 30,000 ft overview. Component ECE 201/255 MOSFET I D = μ n C ox /2 W/L (V GS- V TN ) 2 I D = μ n C ox W/L [(V GS- V TN )V DS-V DS 2 /2 ] Active Region Triode Region I D | (V GS - V TN ) |decreasing v g v s C sb C gs g m v gs g s v s r ds v gs +-i s i d C db 3 ECE 305 – a 30,000 ft overview. Component ECE 305 I-V for “on” and “subthreshold” in terms of device structure, bias, non-ideal effects p- substrate n++ n++ Source Drain V S (= 0) V D = (V GS- V T ) Gate Gate Oxide V G ( > V T )- - - - - - - - - - - - - - - -MOSFET = Metal-Oxide-Semiconductor Field Effect Transistor-- the building block of VLSI (computers, wireless, microprocessors, …) Figure from ITRS Roadmap (ITRS = International Roadmap for Semiconductors) MOSFET Transistor Cross-Section...
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This note was uploaded on 03/25/2011 for the course ECE 305 taught by Professor Melloch during the Spring '08 term at Purdue.
- Spring '08