Lecture_Ch2c

Lecture_Ch2c - Donor Action Band Diagram T = 0 Increasing T...

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1 Carrier Modeling (Ch. 2, cont.) • Energy Bands in Solids Carrier Properties – charge, mass, doping State and Carrier Distributions • Equilibrium Carrier Concentrations Electron Properties Charge: q = 1.6 x 10 -19 C
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2 Fig. 2.9 (F=m*a) Effective Mass in Crystal F = - q Ē = m a Free Electron Mass: m o = 9.11 x 10 -31 kg Table 2.1 (Effective Masses) Effective Mass
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3 “Bands” versus “Edges” Carrier Numbers in Semiconductors n = density of (free) electrons per cm 3
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4 Carrier Numbers in Semiconductors p = density of (free) holes per cm 3 Carrier Numbers in Intrinsic Material Si: n i = 1.6 x 10 10 cm -3 GaAs: n i = 2 x 10 6 cm -3 Ge: n i = 2 x 10 13 cm -3 Intrinsic Material: n = p = n i
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5 Donor Action Acceptor Action
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6 Table 2.2 (Si Dopants)
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Unformatted text preview: Donor Action Band Diagram T = 0 Increasing T Room Temp 7 Acceptor Action Band Diagram T = 0 Increasing T Room Temp Fig. 2.11 (H-like model) 8 Table 2.3 (Binding Energies) Fig. 2.12 (Donor E-band levels)) 9 Density of States in Bands Fermi Function 10 Carrier Distributions 11 Carrier Distributions Carrier Distributions 12 Fermi-Dirac Integral 13 For E C-E F > 3kT For E F-E V > 3kT Nondegenerate Semiconductor 14 Eq. (2.25) Charge Neutrality Relationship 15 Practical Carrier Conc. Relationships Eqs. (2.30/2.31) Fermi Level Position versus Doping 16 Intrinsic Carrier Concentrations Doped Semiconductor Conc. Versus Temp....
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Lecture_Ch2c - Donor Action Band Diagram T = 0 Increasing T...

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