MOS-C_ideal

MOS-C_ideal - Metal-Oxide-Semiconductor(ideal VG = 0...

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1 Metal-Oxide-Semiconductor -- (ideal, V G = 0) -- flatband Depth E n e r g y Φ M E F E V E VAC E C χ Potential E Field ρ Metal-Oxide-Semi. (ideal, V G < 0) – accumulation Depth Φ M E F E V E VAC qV G E C χ Potential E Field ρ E F φ S
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2 Metal-Oxide-Semiconductor (ideal, V G > 0) -- depletion Depth E n e r g y Φ M E F E
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This note was uploaded on 03/25/2011 for the course ECE 305 taught by Professor Melloch during the Spring '08 term at Purdue.

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MOS-C_ideal - Metal-Oxide-Semiconductor(ideal VG = 0...

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