MS_Diodes - PN Junction Diode -- Capacitance Y = G + j ϖ C...

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Unformatted text preview: PN Junction Diode -- Capacitance Y = G + j ϖ C (7.1) C J = K S ε A W (7.2) W = 2 K S ε qN B ( V bi – V A ) 1/2 ... asymmetrical step junction (7.3) W = 12 K S ε qa ( V bi – V A ) 1/3 ... linearly-graded junction (7.4) N B ( x ) = bx m . . . x > (7.5) Metal-Semiconductor Structures • Band Diagrams • Electrostatics • I-V relationships • Applications: Contacts Schottky barriers p- substrate n++ n++ S D V S (= 0) G Gate Oxide V G ( > V T )- - - - - - - - - Device Relevance of Metal-Semiconductor Interfaces 1. Ohmic Contacts Example: S/D contacts in MOSFET: Good contacts: specific contact resistance < 1x10-7 Ω cm 2 b Low barrier height, heavy doping (tunneling or thermionic field emission). Also relevant to most other semiconductor devices, including optoelectronic devices. Contacts and Metallization -- Contacts Ohmic (Physicist) Schottky Ohmic (Engineer) n- channel n++ n++ S D V S (= 0) G V G ( > V T ) Device Relevance of Metal-Semiconductor Interfaces Gate in metal-semiconductor FET...
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This note was uploaded on 03/25/2011 for the course ECE 305 taught by Professor Melloch during the Spring '08 term at Purdue University.

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MS_Diodes - PN Junction Diode -- Capacitance Y = G + j ϖ C...

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