20111ee121B_1_EE121B_HW1

20111ee121B_1_EE121B_HW1 - EE 121B Winter 2011 Prof Chui...

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EE 121B / Winter 2011 / Prof. Chui / UCLA Homework #01, p.1 EE 121B Principles of Semiconductor Device Design Winter 2011 Homework #01 (Due Date: Jan 18 th , 2011, 12 pm in Boelter 6731) Physical constants: I. Electronic charge = 1.60 × 10 -19 C II. Vacuum Permittivity = 8.85 × 10 -14 F/cm III. Boltzmann constant = 8.62 × 10 -5 eV/K IV. Planck constant = 6.63 × 10 -34 J-s V. Electron mass in vacuum = 9.10 × 10 -31 kg General assumptions in all problems unless specifically stated otherwise: I. Temperature = 300 K II. Semiconductor = Silicon a. All necessary physical parameters can be found: http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/index.html Introduction: The purpose of this homework is to exercise your skills in a few very important areas that will come up repeatedly during the quarter: 1) Calculating the electron concentration (in the conduction band) and hole concentration (in the valence band). You should consider the effects of material properties (e.g. bandgap, effective density of states, etc.), temperature (e.g. freeze-out, etc.), doping, and
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This note was uploaded on 03/28/2011 for the course EE 121b taught by Professor Bjt-gamma during the Winter '08 term at UCLA.

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20111ee121B_1_EE121B_HW1 - EE 121B Winter 2011 Prof Chui...

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