20111ee121B_1_EE121B_HW2

20111ee121B_1_EE121B_HW2 - EE 121B / Winter 2011 / Prof....

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EE 121B / Winter 2011 / Prof. Chui / UCLA Homework #02, p.1 EE 121B Principles of Semiconductor Device Design Winter 2011 Homework #02 (Due Date: Jan 26 th , 2011, 12 pm in Boelter 6731) Physical constants: I. Electronic charge = 1.60 × 10 -19 C II. Vacuum Permittivity = 8.85 × 10 -14 F/cm III. Boltzmann constant = 8.62 × 10 -5 eV/K IV. Planck constant = 6.63 × 10 -34 J-s V. Electron mass in vacuum = 9.10 × 10 -31 kg General assumptions in all problems unless specifically stated otherwise: I. Temperature = 300 K II. Semiconductor = Silicon a. Intrinsic carrier concentration = 1 × 10 10 /cm 3 b. All other necessary physical parameters can be found: http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/index.html Introduction: The purpose of this homework is to consolidate your fundamental knowledge of PN-junctions in preparation for your upcoming Bipolar Junction Transistor learning. The first question analyzes the electrostatic characteristics of a PN-junction under equilibrium. The second one analyzes
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20111ee121B_1_EE121B_HW2 - EE 121B / Winter 2011 / Prof....

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