20111ee121B_1_EE121B_HW3_v2

20111ee121B_1_EE121B_HW3_v2 - EE 121B / Winter 2011 / Prof....

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EE 121B / Winter 2011 / Prof. Chui / UCLA Homework #03, p.1 EE 121B Principles of Semiconductor Device Design Winter 2011 Homework #03 (Due Date: Feb 3 rd , 2011, 12 pm in Boelter 6731) Apply the same set of physical constants and general assumptions stated in Homework #02. Introduction: The purpose of this homework is to examine the fundamentals of BJT operation, amplification, voltage biasing, and current-voltage characteristics. The first question asks you to compute the key amplification metrics. The second one tests your familiarity with the minority carrier distribution under different biasing combinations. The third one requires you to utilize the Ebers- Moll equations and predicts the input and output characteristics. The forth question is an open- end design problem to meet certain performance specifications. N ( N dE ) P ( N aB ) W Base N ( N dc ) W b Emitter Base Collector 3 Width, W Base ( µ m) Doping (cm -3 ) 10 17 10 15 5 × 10 18 2 × 10 -7 2.2 × 10 -5 2.0 × 10 -4 Minority Carrier Lifetime (s)
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20111ee121B_1_EE121B_HW3_v2 - EE 121B / Winter 2011 / Prof....

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