20111ee121B_1_EE121B_HW4

20111ee121B_1_EE121B_HW4 - EE 121B / Winter 2011 / Prof....

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EE 121B / Winter 2011 / Prof. Chui / UCLA Homework #04, p.1 EE 121B Principles of Semiconductor Device Design Winter 2011 Homework #04 (Due Date: Feb 9 th , 2011, 12 pm in Boelter 6731) Apply the same set of physical constants and general assumptions stated in Homework #02. Introduction: The purpose of this homework is to evaluate the BJT switching transient responses as well as their operating voltage limits. The first question asks you to compute the turn-on and turn-off ‘delay’ time. The second one requires you to compute the voltage at which either base punchthrough or breakdown occurs. In addition, you need to suggest a design strategy to increase these voltages to improve the device reliability. N ( N dE ) P ( N aB ) W Base N ( N dc ) W b Emitter Base Collector 2 Width, W Base ( µ m) Doping (cm -3 ) 10 16 10 15 5 × 10 18 2 × 10 -7 2.2 × 10 -5 2.0 × 10 -4 Minority Carrier Lifetime (s) Minority Carrier Mobility (cm 2 /V-s) 140 230 1400 Figure 1 Questions: 1)
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This note was uploaded on 03/28/2011 for the course EE 121b taught by Professor Bjt-gamma during the Winter '08 term at UCLA.

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20111ee121B_1_EE121B_HW4 - EE 121B / Winter 2011 / Prof....

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