20111ee121B_1_EE121B_HW6

20111ee121B_1_EE121B_HW6 - EE 121B / Winter 2011 / Prof....

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EE 121B / Winter 2011 / Prof. Chui / UCLA Homework #06, p.1 EE 121B Principles of Semiconductor Device Design Winter 2011 Homework #06 (Due Date: Mar 10 th , 2011, 12 pm in Boelter 6731) Apply the same set of physical constants and general assumptions stated in Homework #02. Introduction: This last homework aims to further your understanding on practical MOS capacitors performance as well as to familiarize yourself with the MOSFET basics discussed in the lectures. The first question asks you to evaluate the spatial dependence of oxide charges on the resultant MOS capacitor threshold voltage. The first half of the second question consolidates your qualitative understanding of the MOSFET current-voltage behaviors. The second half of the second question goes further into the electric field profile along the inversion channel to gain insight about its biasing voltage dependences. Questions: 1) For an MOS capacitor with a metal gate electrode with work function of 5.0 eV, a n -type silicon substrate doping of 10
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20111ee121B_1_EE121B_HW6 - EE 121B / Winter 2011 / Prof....

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