DIC_Lecture2_Device_492409351

DIC_Lecture2_Device_492409351 - The Devices Leibo LIU()...

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The Devices eibo LIU( 雷波 Leibo LIU( 刘雷波 ) Division of IC & System Design, IMETU [email protected] [email protected] Sep. 25, 2010
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Chapter Outline . troduction 1. Introduction 2. The Diode 3. The MOSFET Transistor econdary Effects 4. Secondary Effects 5. Summary 6. Textbook Reference Sep. 25, 2010 2 The Devices
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1. Introduction SRAM SRAM SRAM SRAM ± What are the basic building blocks in today’s CMOS digital integrated circuits? Program Logic Diode MOS Transistor SRAM SRAM SRAM SRAM Interconnect Wires DWT (Korea Dongbu 0.25um 1P4M Logic) Sep. 25, 2010 3 The Devices MOS Transistor Diode Interconnect Wires
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Chapter Outline . troduction 1. Introduction 2. The Diode 3. The MOSFET Transistor econdary Effects 4. Secondary Effects 5. Summary 6. Textbook Reference Sep. 25, 2010 4 The Devices
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2. The Diode: Significance ± Why is the Diode very significant in MOS digital IC everse- iased diodes, directly impacting the Reverse biased diodes, directly impacting the behavior of the device, are still omnipresent in today’s MOS digital IC To protect the input devices of an IC against Electrostatic Discharge (ESD) V DD Gate Oxide R D 1 PAD D 2 X P pn-junction diode Diode C A D Sep. 25, 2010 5 The Devices parasitic capacitance Input protection circuit
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2. The Diode: Abrupt pn-junction diode BA SiO 2 Al Doped with acceptor purities p impurities n Cross-section of pn -junction in an IC process Depletion region oped with A Al Doped with donor impurities n p A B B One-dimensional representation diode symbol Sep. 25, 2010 6 The Devices Mostly occurring as parasitic element in Digital ICs
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2. The Diode: Depletion Region Electron diffusion Hole diffusion a Current flow N N Build-in potential + ++ ++ ++ + -- p + n lectron drift = 2 0 ln i D A T n φ Thermal voltage Electron drift Hole drift b Charge density ρ 00K mV 26 = = q kT T lectrical field x 300K = T 9 N A : acceptor concentration 9 N : donor concentration c Electrical field E x D 9 n i : intrinsic carrier concentration in a pure sample of semiconductor d Electrostatic otential V x - W 9 k : Boltzmann constant 8.63x10 -5 ev/k The abrupt pn-junction Sep. 25, 2010 7 The Devices potential 0 1 W 2 under equilibrium
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2. The Diode: Depletion Region ± Example 2.1 Calculation of built-in voltage of pn-junction An abrupt junction, given N A 10 15 cm - 3 N D = 10 16 cm - 3 solve for the built-in potential at T= 300 K N N KT D A = n ln q i 0 0 16 15 2 0 φ () V . . ln . 637 0 10 5 1 10 10 026 0 2 10 = × × × = V At room temperature the built-in potential of silicon normally ranges om 0 6V to 0 8V nd that of germanium ranges from 0 2V to 0 3V Sep. 25, 2010 8 The Devices from 0.6V to 0.8V and that of germanium ranges from 0.2V to 0.3V.
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2. The Diode tatic Behavior ± Static Behavior ± Dynamic Behavior Sep. 25, 2010 9 The Devices
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2. The Diode: Static behavior Forward Bias ypically avoided in Digital ICs Typically avoided in Digital ICs Minority carrier concentration in the Sep. 25, 2010 10 The Devices neutral region under forward-bias condition
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2. The Diode:
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This note was uploaded on 03/28/2011 for the course EE 40260173 taught by Professor Lieboliu during the Spring '11 term at Tsinghua University.

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DIC_Lecture2_Device_492409351 - The Devices Leibo LIU()...

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