ECE_265A_Final_2003

ECE_265A_Final_2003 - ECE 265A FINAL EXAM This test is open...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 265A FINAL EXAM This test is open book, open notes, etc. Points will be taken off for messy, sloppy, or unsupported answers. Good luck! 1. The circuit in Figure 1 is an NMOS low-noise amplifier, meant to be the first stage of a receiver. The transistor itself is characterized by the ideal square-law behavior of a MOSFET, i.e. 2 ds ( / )[( )] for V ( ) 2 ds gs T gs T k I WL V V V V =− > The generator and load impedances are 50 ohms, and there is no matching network at the input. The NMOS device has a value of k = 2*10 -4 A/V 2 , a W/L = 200, and is biased at 5 mA. Assume that the transistor itself is ideal (it has no internal capacitances, no body effect, and zero gate resistance). Assume also that the MOSFET drain noise is characterized by the long-channel drain current noise model where the “2/3” factor for the channel resistance is assumed for the noise (page 21 of the noise notes). Source resistance Rs is added to the amplifier to “improve its linearity.” What value of Rs will result in an overall Noise Figure of 3 dB for this amplifier?
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 04/02/2011 for the course ECE 265A taught by Professor Song during the Spring '11 term at UCSB.

Page1 / 2

ECE_265A_Final_2003 - ECE 265A FINAL EXAM This test is open...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online