This preview shows page 1. Sign up to view the full content.
Unformatted text preview: N D = 1x10 16 cm-3 . Assume that the holes are injected at both ends of the crystal to create steady-state carrier concentrations ∆ p n (x=0) = ∆ p 1 , ∆ p n (x=L) = ∆ p 2 . You may assume that these carrier concentrations correspond to low-level injection. The diffusion coefficient for holes is D p , and the minority carrier life-time is τ p . i. Following the general approach shown in class, derive the differential equation for the non-equilibrium hole concentration ∆ p n (x). ii. Write down the general solution to the differential equation in (a), and using the boundary conditions given obtain the complete solution for ∆ p n (x) in terms of q, ∆ p 1 , ∆ p 2 , L, ∆ p , and τ p . iii. Compute the hole current J p due to diffusion at x = 0. 4. Pierret, Problem 3.20. 5. Pierret, Problem 3.22. 6. Pierret, Problem 3.24....
View Full Document
This note was uploaded on 04/02/2011 for the course ECE 103 taught by Professor Song during the Spring '11 term at UCSB.
- Spring '11