W11_HW4

# W11_HW4 - 16 cm-3 on the n-side and a cross sectional area...

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ECE103 (Winter 2011) HW #4 2/9/11 (Due on 2/17, before class) 1. Pierret, Problem 5.4 2. Pierret, Problem 5.5. 3. An abrupt Si p-n junction has N A = 10 17 cm -3 on the p-side and N D = 10 16 cm -3 on the n- side. At 300K, calculate the Fermi Levels, draw an equilibrium band diagram, and find V bi from the diagram. 4. Boron is implanted into an n-type Si sample (N D = 10 16 cm -3 ), forming an abrupt junction of square cross section with area = 2 x 10-3 cm2. Assume that the acceptor concentration on the p-type region is N A = 2x10 18 cm -3 . Calculate V bi , x n0 , p n0 , Q + , and E 0 for this junction at equilibrium (300K). Sketch E (x) and the charge density ρ (x) to scale. 5. A Si p + -n junction has a donor concentration of 5 x 10
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Unformatted text preview: 16 cm-3 on the n-side and a cross sectional area of 10-3 cm-3 . If τ p = 1 ms and D p = 10 cm 2 /s, calculate the current under a forward bias of 0.5 V at 300K. 6. A p +-n junction with the n-side donor concentration of 10 16 cm-3 . If n i = 10 10 cm-3 , the relative dielectric constant ε r = 12, D n = 50 cm 2 /s, and D p = 20 cm 2 /s, τ n = 100 ns and τ p = 50 ns. Calculate the hole diffusion current density 2 μ m from the depletion edge on the n-side under a forward bias of 0.6 V. How will the hole diffusion current change if we double the doping on the p + side? 7. Pierret, Problem 5.8. 8. Pierret, Problem 5.11....
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