Unformatted text preview: 16 cm-3 on the n-side and a cross sectional area of 10-3 cm-3 . If τ p = 1 ms and D p = 10 cm 2 /s, calculate the current under a forward bias of 0.5 V at 300K. 6. A p +-n junction with the n-side donor concentration of 10 16 cm-3 . If n i = 10 10 cm-3 , the relative dielectric constant ε r = 12, D n = 50 cm 2 /s, and D p = 20 cm 2 /s, τ n = 100 ns and τ p = 50 ns. Calculate the hole diffusion current density 2 μ m from the depletion edge on the n-side under a forward bias of 0.6 V. How will the hole diffusion current change if we double the doping on the p + side? 7. Pierret, Problem 5.8. 8. Pierret, Problem 5.11....
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- Spring '11
- P-n junction, Vbi, Si p-n junction, Si p+-n junction