W11_HW5

# W11_HW5 - ECE103(W11 HW#5(Due on Th before class 1 For a...

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ECE103 (W11) HW #5 2/17/11 (Due on Th, 2/24/11, before class! ) 1. For a typically doped Si pnp and npn transistor, sketch the energy band diagram, electrostatic potential, electric field, and charge density inside the device as a function of position under active mode biasing condition. 2. Pierret 10.9. 3. Pierret 10.10. 4. Consider a p + -n-p transistor with the parameters indicated below: Emitter Base Collector N E =10 18 cm -3 N B =10 16 cm -3 N C =10 15 cm -3 τ E =10 -8 s τ B =10 -7 s τ C =10 -7 s D E =7cm 2 /s D B =10cm 2 /s D c =45cm 2 /s W B =1x10 -4 cm Consider also an n + -p-n transistor with the parameters indicated below: Emitter Base Collector N E =10 18 cm -3 N B =10 16 cm -3 N C =10 15 cm -3 τ E =10 -8 s τ B =5x10 -8 s τ C =10 -7 s D E =2cm 2 /s D B =34cm 2 /s D c =12cm 2 /s W B =1x10 -4 cm Both devices are operated at 300K and have a cross-sectional area of 10 -4 cm 2 . a. Calculate the built-in potentials ( V bi-BE & V bi-BC ) for both transistors. Compare and comment. b.

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• Spring '11
• Song
• Transistor, Bipolar junction transistor, Emitter Base Collector, base-emitter forward bias, base-collector reverse bias, Base Collector NE=1018cm-3, NE=1018cm-3 NB=1016cm-3 NC=1015cm-3

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W11_HW5 - ECE103(W11 HW#5(Due on Th before class 1 For a...

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