W11_HW5

W11_HW5 - ECE103 (W11) HW #5 2/17/11 (Due on Th, 2/24/11,...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE103 (W11) HW #5 2/17/11 (Due on Th, 2/24/11, before class! ) 1. For a typically doped Si pnp and npn transistor, sketch the energy band diagram, electrostatic potential, electric field, and charge density inside the device as a function of position under active mode biasing condition. 2. Pierret 10.9. 3. Pierret 10.10. 4. Consider a p + -n-p transistor with the parameters indicated below: Emitter Base Collector N E =10 18 cm -3 N B =10 16 cm -3 N C =10 15 cm -3 τ E =10 -8 s τ B =10 -7 s τ C =10 -7 s D E =7cm 2 /s D B =10cm 2 /s D c =45cm 2 /s W B =1x10 -4 cm Consider also an n + -p-n transistor with the parameters indicated below: Emitter Base Collector N E =10 18 cm -3 N B =10 16 cm -3 N C =10 15 cm -3 τ E =10 -8 s τ B =5x10 -8 s τ C =10 -7 s D E =2cm 2 /s D B =34cm 2 /s D c =12cm 2 /s W B =1x10 -4 cm Both devices are operated at 300K and have a cross-sectional area of 10 -4 cm 2 . a. Calculate the built-in potentials ( V bi-BE & V bi-BC ) for both transistors. Compare and comment. b.
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 2

W11_HW5 - ECE103 (W11) HW #5 2/17/11 (Due on Th, 2/24/11,...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online