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Unformatted text preview: Chapter 10 (10.1-10.5): bipolar junction transistors, structure (emitter, base, collector), current, voltage, operation (modes), emitter efficiency, base transport factor, common base and common emitter dc current gain. Chapter 11 (11.1-11.2.4): BJT basic assumptions, current and current gain calculations, performance parameters, Ebers-Moll equation, base width modulation and punch-through, avalanche breakdown. Chapter 15 (15.1): MOS concepts. MOS structure. Chapter 16 (16.1-16.5): MOSFET structure, work function, electron affinity, MOS operation, gate voltage relationship, capacitance voltage relationship, capacitance calculation. Chapter 17 (17.1-17.2): MOSFET operation, effective mobility, threshold voltage, current calculation, Pinch-off, saturation current, I-V characteristics....
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This note was uploaded on 04/02/2011 for the course ECE 103 taught by Professor Song during the Spring '11 term at UCSB.
- Spring '11