ECE103 final Review topics _ W11

ECE103 final Review topics _ W11 - Chapter 10 (10.1-10.5):...

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ECE103 (W11) Review topics (Concepts and calculations) 3/10/2011 Chapter 2 (2.1-2.6): Carriers (under equilibrium) in semiconductors, Bonding, energy band, band gap, Doping, Effective mass, density of states, Fermi distribution, and carrier concentration (calculation). Chapter 3 (3.1-3.6): majority and minority carriers, life time, diffusion length, continuity equation, minority carrier diffusion equations, steady states, recombination, generation. Chapter 5 (5.1-5.2.4): Poisson’s equation, pn junction, step junction, bult-in potential, depletion and depletion approximation, depletion width, electric field and potential across pn junction. Chapter 6 (6.16.1-6.2): pn diode operation, ideal pn diode current, derivation, deviation of ideal diode behaviors, breakdown (avalanche and Zener breakdown), generation- recombination current.
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Unformatted text preview: Chapter 10 (10.1-10.5): bipolar junction transistors, structure (emitter, base, collector), current, voltage, operation (modes), emitter efficiency, base transport factor, common base and common emitter dc current gain. Chapter 11 (11.1-11.2.4): BJT basic assumptions, current and current gain calculations, performance parameters, Ebers-Moll equation, base width modulation and punch-through, avalanche breakdown. Chapter 15 (15.1): MOS concepts. MOS structure. Chapter 16 (16.1-16.5): MOSFET structure, work function, electron affinity, MOS operation, gate voltage relationship, capacitance voltage relationship, capacitance calculation. Chapter 17 (17.1-17.2): MOSFET operation, effective mobility, threshold voltage, current calculation, Pinch-off, saturation current, I-V characteristics....
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This note was uploaded on 04/02/2011 for the course ECE 103 taught by Professor Song during the Spring '11 term at UCSB.

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