ECE103_midterm2_W11

ECE103_midterm2_W11 - Midterm Exam 2 ECE103 ALLOWED...

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Midterm Exam 2 ECE103 3/1/2011 ALLOWED: Calculators and one 8.5”x11” page of notes (two side s ). Note you are required to turn in your page of notes with our exam. NOT ALLOWED: Textbooks, class notes, problem sets, etc. ATTEMPT ALL PROBLEMS AND SHOW ALL WORK! This exam has a maximum score of 100 points. You have 80 minutes to complete this exam. q = 1.60x10 -19 C; k = 8.617x10 -5 eV/K; m 0 = 9.11x10 -31 kg; ε 0 = 8.85x10 -14 F/cm; 1 μ m = 1x10 -4 cm = 1x10 -6 m; n i (Si, T=300K) = 1.0x10 10 cm -3 ; E g (Si at T=300K) = 1.12 eV; n i (GaAs, T=300K) = 2.2x10 6 cm -3 ; E g (GaAs at T=300K) = 1.42 eV; Lattice constant (a=5.65 x 10 -8 cm for GaAs and 5.43 x 10 -8 cm for Si). 1. (30 points). Please give concise answers. (a) In a piece of p-Si, describe what are the majority and minority carriers? What are the 4 carrier motions and can you illustrate the process with schematic drawings? (b) i) What are the assumptions for an ideal p/n junction diode? (c) Under reverse biasing condition, the breakdown may occur. Describe two breakdown mechanisms, use energy band diagram if necessary (d)
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