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Unformatted text preview: 2. [12 points] Determine the surface density of atoms for Si on the (a) (100) plane, (b) (110) plane, and (c) (111) plane. 3. [35 points] At T=300K, Si atoms, at a concentration of 10 10 cm-3 , are added to GaAs. Assume that the Si atoms act as fully ionized dopant atoms, and that 10% of the concentration added replace Ga atoms and 90% replace As atoms. (a) Determine the donor and acceptor concentration. (b) Calculate the thermal equilibrium values of electron and hole concentrations. (c) Under an applied E-field of 10V/cm, calculate the electron, hole, and total drift current density. 4. [30 points] The electron concentration in a piece of n-Si varies linearly from 10 17 cm-3 at x=0 to 6x10 16 cm-3 at x=4 μ m. There is no applied electric field. The electron current density is measured to be -400 A/cm 2 . What is the electron diffusion coefficient? Calculate the electron mobility and life time (effective mass, M * n = 0.067 m )....
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This note was uploaded on 04/02/2011 for the course ECE 103 taught by Professor Song during the Spring '11 term at UCSB.
- Spring '11