ECE108 final exam spring 2001 answers

ECE108 final exam spring 2001 answers - STUDENT NAME...

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STUDENT NAME __________________ ESENER STUDENT ID _____________________ ECE108 FINAL Spring 2001 Questions 1-8 are 1 points each. Question 9 is 2 points Please answer in the spaces below 1. Describe why the drain current of a MOSFET saturates with increasing drain voltage When the drain voltage is high enough the voltage drop across the gate and the drain can be less then Vt and this region will no longer be inverted. Then carriers will be traveling near constant saturated velocity and the drain voltage will no longer have an effect on the current flow 2. Enumerate the process steps involved in the fabrication of a poly gate CMOS inverter A. tub diffusion and patterning B. polygate deposition and patterning C. n-type source and drain implant D. p-type source and drain implant E. contact opening F. Metallization 3. Compare the properties and structure of bipolar transistors to that of MOSFETs. Why are bipolar circuits inherently faster? Not applicable to 2002 students
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ECE108 final exam spring 2001 answers - STUDENT NAME...

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