F09ECE108mixedproblems4final

F09ECE108mixedproblems4final - ECE108 Additional Problems...

Info icon This preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE108 Additional Problems for Finals 2003 Dynamic Circuit Design In a DRAM circuit the leakage current per storage cell is measured to be 1nA. Assuming that the storage cell capacitance Cs = 10fF, that the voltage across the storage capacitor is allowed to discharge or charge by only 100mV, and that the sense amplifier can perform a sense and refresh operation every 100ns, calculate the maximum number of storage cells that can be refreshed by this sense amplifier. Pseudo NMOS In the CMOS circuit shown in figure 1, V i is first kept low. a) Estimate V o when the gate of the PMOS transistor is connected to ground. b) Estimate V o when the gate of the PMOS transistor is connected to the 2.5V. Vdd=5V Vo Vi Vg Vtp=-1V Vtn=1V Figure 1 Figure 2: Buffer Design Specifically using relevant equations for the saturated current and capacitance show how the average delay t p =C L V/I av and power dissipation P av = C L V 2 /t p of a long channel MOSFET inverter is scaled when voltages and geometrical dimensions are scaled down (Full scaling). (Hint: C ox ~1/t ox ; C L ~ C ox WL) The minimum size inverter input capacitance is given as 10fF, and t p0 =1ns.This inverter needs to drive the address row (ROW ACCESS) of a ROM circuit that exhibits a parasitic capacitance of 640fF. Design a suitable buffer circuit (provide u) such that the overall propagation delay of the row access driver does not exceed 20ns.
Image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

What students are saying

  • Left Quote Icon

    As a current student on this bumpy collegiate pathway, I stumbled upon Course Hero, where I can find study resources for nearly all my courses, get online help from tutors 24/7, and even share my old projects, papers, and lecture notes with other students.

    Student Picture

    Kiran Temple University Fox School of Business ‘17, Course Hero Intern

  • Left Quote Icon

    I cannot even describe how much Course Hero helped me this summer. It’s truly become something I can always rely on and help me. In the end, I was not only able to survive summer classes, but I was able to thrive thanks to Course Hero.

    Student Picture

    Dana University of Pennsylvania ‘17, Course Hero Intern

  • Left Quote Icon

    The ability to access any university’s resources through Course Hero proved invaluable in my case. I was behind on Tulane coursework and actually used UCLA’s materials to help me move forward and get everything together on time.

    Student Picture

    Jill Tulane University ‘16, Course Hero Intern