Chapter_4 [Compatibility Mode]

Chapter_4 [Compatibility Mode] - Chapter 4 Design...

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1 J. Wang 2010-10-25 1 Chapter 4 • Power semi-conductor devices • Gate drive design • Busbar and snubber circuits • High power DC chopper example Design considerations: J. Wang 2010-10-25 2 Ideal Switching Device When switch is on (closed) 0 = S v When switch is off (open) 0 = S i In either state, power loss on the switch is zero During switching transients, voltage and current changes instantaneous, thus no power loss during the switching.
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2 J. Wang 2010-10-25 3 Real Switching Device Performance When switch is on (closed) 0 S v When switch is off (open) 0 S i The leakage current during the off state is very small and can be ignored. But the voltage drop on the switch during on state will cause major power loss. Example: Typical on voltage drop of a 1200 V rated IGBT at 300 A would be between 1.5~2 V. Switching loss occurs during switching J. Wang 2010-10-25 4 Power Diode V/I characteristics Uni-directional Uncontrollable F V Source : Text Book
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3 J. Wang 2010-10-25 5 Power Diode (Continued) J. Wang 2010-10-25 6 Reverse Recovery Source : Text Book
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4 J. Wang 2010-10-25 7 Three Major Types of Diodes Schottky Diode : Low forward voltage drop Traditionally, the reverse blocking voltage is less than 200 V Fast Recovery Diode : Small trr Widely used in high power and high switching frequency circuits Line Frequency Diode : Low forward voltage drop at the sacrifice of the reverse recovery time Used in 50 or 60 Hz rectifier Most new development: 600 V SiC from Infineon without reverse recovery J. Wang 2010-10-25 8 Example of Fast Recovery Power Diode
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Chapter_4 [Compatibility Mode] - Chapter 4 Design...

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