Project1TestSolution - Project 1/Test 2 EE 5342(print last...

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Page 1 Project 1/Test 2 - EE 5342 (print last name) ______________________ (print first name) ____ SOLUTION ___ 9:30 AM, Thursday February 12, 2004, 105 Nedderman Hall 80 minutes allowed (last four digits of your student #) _____________ (e-mail if new)______________________ I n s t r u c t i o n s : Seat Number ____________ 1. Do your own work. DO NOT REMOVE THE STAPLE ON THIS EXAM. 2. You may use a legal copy of the text by Massobrio and Antognetti. You may write notes in your text. You may NOT pass a book or note sheet to another student, or class notes or previously solved problems. You may use your Project 1 solution and must submit it with this test in your exam packet . 3. Calculator allowed. You may NOT share a calculator with another student. 4. Where values or equations are given on this cover sheet, use them in lieu of any other source. If a value is not given, explicitly state definitions and assumptions that you use. 5. Where possible, calculate parameters rather than read them from a graph. 6. Do all work in the spaces provided on this exam paper. If you write on the back of a sheet, make the no- tation "PTO" in your solution in order to assure that material written on the back of the page is evaluated for a grade. AN EXTRA BLANK SHEET IS ATTACHED AT THE BACK OF THE EXAM. 7. Show all calculations, making numerical substitutions and giving numerical results where possible. 8. The total for the test is 75. Up to 25 additional points will be given for the Project report . 9. Unless stated otherwise, T = 300K, V t = 25.852 mV 10. Unless otherwise stated, the material is silicon (300K) with n i = 1.45E10 cm -3 N c = 2.8E19 cm -3 q χ Si = 4.05 eV E g,Si = 1.124 eV. N v = 1.04E19 cm -3 11. For the work function of poly silicon, use φ n+ = χ si = 4.05 V φ p+ = χ Si + E g,Si /q = 5.174 V. 12. For minority carrier (either electrons or holes) lifetime in silicon, use the relationship τ min = (4.5E-5 sec)/(1 + N i /1E17 + (N i /5E17) 2 ), where N i = the total impurity concentration in cm -3 13. For holes in silicon doped primarily with boron*, assume µ p = {470.5 ÷ [1+(N i ÷ 2.23E17) 0.719 ]}+44.9, in cm 2 /V-sec. 14. For electrons in silicon doped primarily with phosphorous*, assume µ n = {1414 ÷ [1+(N i ÷ 9.2E16) 0.711 ]}+68.5, in cm 2 /V-sec. 15. For electrons in silicon doped primarily with arsenic, assume µ n = {1417 ÷ [1+(N i ÷ 9.68E16) 0.68 ]}+52.2, in cm 2 /V-sec. (In 12 through 15, N i = the total impurity concentration in n- or p-type material, compensated or not.) (*13 may be used as an approximation for holes as minority carriers, likewise *14 for minority electrons.) 16. Metal gate work functions should be assumed to be φ M,Al = 4.1 V for aluminum, φ M,Pt = 5.3 V for platinum, φ M,Au = 4.75 V for gold 17. The electron affinity of SiO 2 is χ SiO2 = 1.00 V. 18.
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This note was uploaded on 04/05/2011 for the course EE 5368 taught by Professor Staff during the Spring '08 term at UT Arlington.

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Project1TestSolution - Project 1/Test 2 EE 5342(print last...

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