ECE162-Lecture-19-MOS-Gated-Diode

ECE162-Lecture-19-MOS-Gated-Diode - ECE 162 FUNDAMENTALS OF...

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ECE 162 FUNDAMENTALS OF MICROELECTRONIC DEVICES Lecture 19 METAL-GATE MOS-GATED DIODES Professor Hisham Z. Massoud Department of Electrical and Computer Engineering Fitzpatrick Building, Room 3521 Duke University, Durham, NC 27708–0291 [email protected] https://courses.duke.edu/webapps/portal/frameset.jsp ECE 162 Chapter 12 – Metal-Gate MOS-Gated Diodes Lecture 19.1
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LECTURE 19 – TOPICS 1. Static Current-Voltage Characteristics 1.1. Assumptions 1.2. Static Current-Voltage Characteristics in the Accumulation Range 1.3. Static Current-Voltage Characteristics in the Depletion Range 1.4. Static Current-Voltage Characteristics in the Inversion Range 2. Small-Signal Capacitance-Voltage Characteristics ECE 162 Chapter 12 – Metal-Gate MOS-Gated Diodes Lecture 19.2
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1. STATIC CURRENT-VOLTAGE CHARACTERISTICS 1.1. Assumptions The effect of the gate-to-bulk bias voltage V GB on the reverse-bias current in the base-source PN-junction diode is described. In this analysis, the following assumptions are made : The dimension L s or source length is the length of the source region along the gate-oxide/substrate interface. The dimension L ch or channel length is the distance between the metallurgical junction at y = 0 underneath the gate electrode to the end that electrode at y = L ch . ECE 162 Chapter 12 – Metal-Gate MOS-Gated Diodes Lecture 19.3
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1. STATIC CURRENT-VOLTAGE CHARACTERISTICS 1.1. Assumptions There are two regions in a metal-gate MOS-gated diode where the semicon- ductor variables have two-dimensional distributions : The transition region between the PN-junction diode and the MOS capacitor channel under the gate electrode, and The transition region near the end of the gate electrode at y = L ch . These two transition regions are assumed to extend over lateral dimensions that are much smaller than the source length L s and the channel length L ch . The width of the source is W s and the width of the channel is W ch . ECE 162 Chapter 12 – Metal-Gate MOS-Gated Diodes Lecture 19.4
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1. STATIC CURRENT-VOLTAGE CHARACTERISTICS 1.1. Assumptions In the analysis of the reverse-bias current in this MOS-gated PN- junction diode, the effects of these transition regions are neglected. The convention for the direction of currents in a multi-terminal device is that all currents are assumed positive if they flow into the device. The magnitude of the reverse-bias current in the MOS-gated diode is, therefore, the source-terminal current I S ( V BS , V GB ). The bulk-to-source bias voltage V BS is assumed to be constant in this analysis. The gate-to-bulk bias voltage V GB is varied. This analysis is carried out in the accumulation, depletion, and in- version bias ranges of the MOS capacitor part of the MOS-gated diode. ECE 162 Chapter 12 – Metal-Gate MOS-Gated Diodes Lecture 19.5
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1. STATIC CURRENT-VOLTAGE CHARACTERISTICS Static I ( V ) Characteristics in the Accumulation Bias Range SiO 2 Metal Gate S-Contact Bulk Contact n + -Source p -type Si Substrate - V BS V GB < V FB · N 0 ECE 162 Chapter 12 – Metal-Gate MOS-Gated Diodes Lecture 19.6
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1. STATIC CURRENT-VOLTAGE CHARACTERISTICS
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