Sample_Exam_1b

# Sample_Exam_1b - EE 310 Electronic Circuit Design I Fall...

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EE 310 Electronic Circuit Design I Fall 2009 Exam I Name: ____________________________ PSU ID Number: ___________________ Section Number: ___________________ Do not turn the page and begin this exam until the start time. 1. First, put your name, PSU ID and section numbers in the spaces above and on the exam answer form. 2. Please wait until you are instructed to begin the exam. Instructions: 1. This exam is closed book, closed notes. You may use a calculator but it may not be shared with anyone else during the exam. 2. Answers for the multiple choice problems should be entered on the provided answer form and in the exam booklet. 3. Time allotted is 120 minutes. 4. Good luck to all! Problems 1 – 20: __________ Problem 21: __________ Problem 22: __________ Problem 23: __________ Total: __________

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EE 310 Exam 1 Fall 2009 10/1/2009 2 Problems 1 – 5 [2 pts.ea.] An n-channel MOSFET has the i-v characteristics shown in the figure. For each of the listed circuit configurations, choose the answer that best describes the DC operating point or points for the MOSFET. 1. A MOSFET biased as a linear amplifier A v D y B w E z C x 2. A MOSFET operating in the nonsaturation region A v D v, w, and x B x E x, y, and z C z 3. A MOSFET switch having the smallest voltage drop across the device A v D y B w E z C x 4. A MOSFET switch in the “OFF” position A v D y B w E z C x 5. A MOSFET switch in the “ON” position and having the largest drain current A v D y B w E z C x
Fall 2009 10/1/2009 3 Problems 6 – 7 [3 pts. ea.] 6. Assuming that the diodes are ideal devices, solve for the current in the 2-kΩ resistor. Current values: A 1.5 mA D 4.0 mA B 3.0 mA E 4.5 mA C 3.5 mA 7. Determine I for the case that the diodes are modeled as ideal devices. I

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## This note was uploaded on 04/19/2011 for the course E E 310 taught by Professor Wharton,markjedwards,perrysto during the Fall '10 term at Penn State.

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Sample_Exam_1b - EE 310 Electronic Circuit Design I Fall...

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