ne3210s1-new(appendix-2 for ch5) - SUPER LOW NOISE HJ FET...

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SUPER LOW NOISE HJ FET NE3210S01 DESCRIPTION The NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE 3210S01 is housed in a low cost plastic package which is available in tape and reel. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG 0.20 & m • GATE WIDTH: WG = 160 & m PART NUMBER NE3210S01 PACKAGE OUTLINE S01 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX G A Associated Gain 1 , V DS = 2 V, ID = 10 mA, f = 12 GHz dB 12 13.5 NF Noise Figure 1 , V DS = 2 V, ID = 10 mA, f = 12 GHz dB 0.35 0.45 g m Transconductance, V DS = 2 V, ID = 10 mA mS 40 55 I DSS Saturated Drain Current, V DS = 2 V, VGS = 0 V mA 15 40 70 V P Gate to Source Cutoff Voltage, V DS = 2 V, ID = 100 & AV -0.2 -0.7 -2.0 I GSO Gate to Source Leakage Current, V GS = -3 V mA 0.5 10 ELECTRICAL CHARACTERISTICS (T A = 25 ± C) PACKAGE OUTLINE SO1 1. Source 2. Drain 3. Source 4. Gate OUTLINE DIMENSION (Units in mm) 2.0 – 0.2 0.65 TYP 2.0 – 0.2 4 2 3 1 0.5 TYP 2.0–0.2 1.9 – 0.2 0.125 – 0.05 1.6 0.4 MAX 4.0 – 0.2 1.5 MAX K Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories
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PART NUMBER SUPPLY FORM MARKING NE3210S01-T1 Tape & Reel 1000 pcs/reel NE3210S01-T1B Tape & Reel 4000 pcs/reel ORDERING INFORMATION RECOMMENDED OPERATING CONDITIONS (T A = 25 & C) PART NUMBER NE3210S01 SYMBOLS PARAMETERS UNITS MIN TYP MAX V DS Drain to Source Voltage V 2 3 I DS Drain Current mA 10 15 P IN Input Power dBm 0 SYMBOLS PARAMETERS UNITS RATINGS V DS Drain to Source Voltage V 4.0 V GS Gate to Source Voltage V -3.0 I DS Drain Current mA I DSS I GS Gate Current ± A 100 P T Total Power Dissipation mW 165 T CH Channel Temperature & C 125 T STG Storage Temperature & C
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ne3210s1-new(appendix-2 for ch5) - SUPER LOW NOISE HJ FET...

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