bfp420(appendix-3 for ch5) - SIEGET 25 NPN Silicon RF...

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BFP 420 Semiconductor Group Jul-14-1998 1 SIEGET 25 NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to 10 GHz Noise figure F = 1.05 dB at 1.8 GHz outstanding G ms = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metalization for high reliability SIEGET 25 - Line Sie mens G rounded E mitter T ransistor 25 GHz f T - Line VPS05605 4 2 1 3 ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 420 AMs Q62702-F1591 1 = B 2 = E 3 = C 4 = E SOT-343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO V 4.5 V CBO 15 Collector-base voltage V EBO Emitter-base voltage 1.5 Collector current 35 mA I C I B 3 Base current mW 160 Total power dissipation, T S 107 °C P tot Junction temperature T j 150 °C T A -65 ...+150 Ambient temperature Storage temperature T stg -65 ...+150 Thermal Resistance Junction - soldering point 1) R thJS 270 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group 1 1998-11-01
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BFP 420 Semiconductor Group Jul-14-1998 2 Electrical Characteristics at T A = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics 5 6.5 4.5 V (BR)CEO Collector-emitter breakdown voltage I C = 1 mA, I B = 0 V - 200 - Collector-base cutoff current V CB = 5 V, I E = 0 I CBO nA - 35 μA - Emitter-base cutoff current V EB = 1.5 V, I C = 0 I EBO 80 DC current gain I C = 20 mA, V CE = 4 V h FE 150 - 50 AC characteristics Transition frequency I C = 30 mA, V CE = 3 V, f = 2 GHz f T 20 25 - GHz Collector-base capacitance V CB = 2 V, f = 1 MHz C cb - 0.15 0.24 pF Collector-emitter capacitance V CE = 2 V, f = 1 MHz C ce - 0.41 - Emitter-base capacitance V EB = 0.5 V, f = 1 MHz C eb - 0.55 - Noise figure I C = 5 mA, V CE = 2 V, Z S = Z Sopt , f = 1.8 GHz F - 1.05 1.4 dB Power gain 1) I
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