2N7000 - November 1995 2N7000 / 2N7002 / NDS7002A N-Channel...

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November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features ___________________________________________________________________________________________ Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter 2N7000 2N7002 NDS7002A Units V DSS Drain-Source Voltage 60 V V DGR Drain-Gate Voltage (R GS < 1 M Ω ) 60 V V GSS Gate-Source Voltage - Continuous ± 20 V - Non Repetitive (tp < 50μs) ± 40 I D Maximum Drain Current - Continuous 200 115 280 mA - Pulsed 500 800 1500 P D Maximum Power Dissipation 400 200 300 mW Derated above 25 o C 3.2 1.6 2.4 mW/°C T J ,T STG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C T L Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 °C THERMAL CHARACTERISTICS R θ JA Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W 2N7000.SAM Rev. A1 These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High density cell design for low R DS(ON) . Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. S D G S G D TO-92 © 1997 Fairchild Semiconductor Corporation 2N7000 (TO-236AB) 2N7002/NDS7002A
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Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Conditions Typ e Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 10 μA All 60 V I DSS Zero Gate Voltage Drain Current V DS = 48 V, V GS = 0 V 2N7000 1 μA T J =125°C 1 mA V DS = 60 V, V GS = 0 V 2N7002 NDS7002A 1 μA T J =125°C 0.5 mA I GSSF Gate - Body Leakage, Forward V GS = 15 V, V DS = 0 V 2N7000 10 nA V GS = 20 V, V DS = 0 V 2N7002 NDS7002A 100 nA I GSSR Gate - Body Leakage, Reverse V GS = -15 V, V DS = 0 V 2N7000 -10 nA V GS = -20 V, V DS = 0 V 2N7002 NDS7002A -100 nA ON CHARACTERISTICS (Note 1) V GS(th) Gate Threshold Voltage V DS = V GS , I D = 1 mA 2N7000 0.8 2.1 3 V V DS = V GS , I D = 250 μA 2N7002 NDS7002A 1 2.1 2.5 R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, I D = 500 mA 2N7000 1.2 5 Ω T J =125°C 1.9 9 V GS = 4.5 V, I D = 75 mA 1.8 5.3 V GS = 10 V, I D = 500 mA 2N7002 1.2 7.5 T J =100°C
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2N7000 - November 1995 2N7000 / 2N7002 / NDS7002A N-Channel...

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