exp_pre1 - HACETTEPE UNIVERSITY DEPARTMENT OF ELECTRICAL...

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HACETTEPE UNIVERSITY DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING ELE-314 ELECTRONICS LABORATORY III EXPERIMENT 1 SWITCHING CIRCUITS WITH BJT AND JFET 1. PURPOSE : To investigate the switching properties of BJT and JFET. 2. THEORY : BJT : There exists three operating regions of BJT's namely; cut-off, saturation(SAT) and active. In digital applications transistor is operated in cut-off and sat. For this reason the input voltages driving the transistor into cut-off or sat have to be determined. In order to determine whether the BJT is in cut-off or not, at first the terminals of the transistor is assumed to be open circuit and the voltage V BE is determined. If the condition V BE < V BEon (0.65 V for Si and 0.2 V for Ge transistors, but Ge transistors are no longer in use now) is satisfied, then the BJT is in cut-off. To investigate the saturation condition, equivalent saturation circuit of BJT is used. In this case currents I B and I C are calculated separately. If
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exp_pre1 - HACETTEPE UNIVERSITY DEPARTMENT OF ELECTRICAL...

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