03. Doping Profiling

03. Doping Profiling - D.K. Schroder, Semiconductor...

Info iconThis preview shows pages 1–7. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: D.K. Schroder, Semiconductor Characterization Doping Profiling Secondary Ion Mass Spectrometry Spreading Resistance Capacitance Voltage Threshold Voltage D.K. Schroder, Semiconductor Characterization Secondary Ion Mass Spectrometry SIMS is the most common doping profiling technique Incident ions knock out atoms and ions from the substrate The mass of these ions is analyzed B Si Cs, O Mass Analyzer 0 200 400 600 Time (s) 0 0.2 0.4 0.6 0.8 1 Depth ( m) 10 20 10 19 10 18 10 17 10 16 10 15 10 14 Density (cm-3 ) Ion Counts 10 6 10 5 10 4 10 3 10 2 10 1 10 D.K. Schroder, Semiconductor Characterization Spreading Resistance The wafer is bevelled extending the layer thickness Compare R to calibrated standards; R sp dominates ~ 20 m Original Surface Beveled Surface z = x sin( ) sp sp c p R R R R I V R 2 2 2 2 / + + = = I I V Current Spreading I R sp R p R c x htpp://www.ssm-inc.com D.K. Schroder, Semiconductor Characterization Spreading Resistance The spreading resistance of ideal metal- semiconductor contacts can be calculated For flat-bottom probe of diameter d For hemispherical probe of radius r For a real probe k must be experimentally determined d R sp 2 = r R sp 2 = r k R sp 2 = For = 1 -cm, r = 1 m, R sp = 1000-2000 d r D.K. Schroder, Semiconductor Characterization Spreading Resistance Spreading resistance is measured and converted to resistivity and N A or N D profiles 10 14 10 15 10 16 10 17 10 18 10 19 10 20 10 21 10 2 10 3 10 4 10 5 0.02 0.04 0.06 0.08 0.1 N D (cm-3 ) R sp ( ) Depth (m) D.K. Schroder, Semiconductor Characterization Capacitance-Voltage Capacitance-voltage measurements used for Doping profiling Flatband voltage, oxide charge etc. in MOS devices Use phase-sensitive detector to measure in phase and out of phase components.and out of phase components....
View Full Document

This note was uploaded on 05/25/2011 for the course EEE 536 taught by Professor Schroder during the Spring '11 term at ASU.

Page1 / 20

03. Doping Profiling - D.K. Schroder, Semiconductor...

This preview shows document pages 1 - 7. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online