04. Contact Resistance

04. Contact Resistance - Contact Resistance...

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© D.K. Schroder, Semiconductor Characterization Contact Resistance Metal-semiconductor Contacts Specific Contact Resistance Transfer Length Contact String Transfer Length Method Four-terminal Method
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© D.K. Schroder, Semiconductor Characterization Metal – Semiconductor Contacts χ φ = M B Every semiconductor device has contacts Contact resistance is a parasitic resistance Contacts are almost always metal-semiconductor contacts q M q S q q B E C qV bi E F E V W Accumulation Neutral Depletion
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© D.K. Schroder, Semiconductor Characterization Carrier Motion In an ohmic contact, electrons must flow from metal to semiconductor or from semiconductor to metal Current is controlled by barrier width rather than barrier height Low N D Intermediate N D High N D Field Emission Thermionic/Field Emission Thermionic Emission I V FE TFE TE
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© D.K. Schroder, Semiconductor Characterization Carrier Motion n -type and p -type substrates are analogs of one another n - Substrate p - Substrate
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© D.K. Schroder, Semiconductor Characterization Specific Contact Resistivity The specific contact resistivity, ρ c , is an area-independent parameter Thermionic emission For φ B = 0.6 V, A * = 110 A/cm 2 K 2 , T = 300 K 1 0 = = V c dV dJ ( ) 1 * / / 2 = kT qV kT q e e T A J B kT q kT q c B B e e T qA k / 1 / * = = c = 1600
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This note was uploaded on 05/25/2011 for the course EEE 536 taught by Professor Schroder during the Spring '11 term at ASU.

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04. Contact Resistance - Contact Resistance...

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