05. Diodes

05. Diodes - D.K. Schroder, Semiconductor Characterization...

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Unformatted text preview: D.K. Schroder, Semiconductor Characterization Diodes PN Junction Diodes Current - Voltage Series Resistance Schottky Diodes D.K. Schroder, Semiconductor Characterization PN Junction Diodes The current in a Si pn junction diode at room temperature is due to recombination in the space-charge region , I scr , and the quasi-neutral regions , I qnr ( ) ( ) + = 1 exp 1 exp , , kT n Ir V q I kT n Ir V q I I qnr s qnr o scr s scr o 10-12 10-10 10-8 10-6 10-4 10-2 10 0.2 0.4 0.6 0.8 1 Current (A) Voltage (V) Slope = 1/2.3 nkT / q V = Ir s I o,scr qnr scr I o,qnr = nkT qV I I o exp For V > 3kT/q and negligible r s : o I I intercept V 10 ln log log = = + = nkT qV I I o q nkT dV I d Slope 10 ln 1 log = = D.K. Schroder, Semiconductor Characterization PN Junction Diode Resistance Diode series resistance reduces the current = 1 exp nkT qV...
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This note was uploaded on 05/25/2011 for the course EEE 536 taught by Professor Schroder during the Spring '11 term at ASU.

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05. Diodes - D.K. Schroder, Semiconductor Characterization...

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