06. MOSFETs

06. MOSFETs - MOSFETs Drain Current Effective Channel...

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© D.K. Schroder, Semiconductor Characterization MOSFETs Drain Current Effective Channel Length Threshold Voltage
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© D.K. Schroder, Semiconductor Characterization Drain Current – Drain Voltage Linear at low V D Saturated at high V D Device parameters determined at low V D Drain conductance g d Effective channel length L eff Effective channel width W eff Source/drain resistance R SD Effective mobility µ eff 0 0.005 0.01 0.015 0 1 2 3 Drain Current (A) Drain Voltage (V) V G =3 V L=0.4 µ m, W=25 µ m t ox =9 nm 2.25 V 1.5 V 0.75 V Linear Saturated
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© D.K. Schroder, Semiconductor Characterization Drain Current – Gate Voltage Linear at low V D low V G ( V D = 0.1 V) Nonlinear at higher V G Two regions Above threshold voltage Below threshold voltage (subthreshold) Device parameters Threshold voltage V T Transconductance g m Field-effect mobility µ FE 0 0.001 0.002 0 1 2 3 Drain Current (A) Gate Voltage (V) V D = 0.1 V L = 0.4 µ m t ox = 9 nm Below Threshold Above Threshold V T Deviation due R SD and eff 10 -12 10 -10 10 -8 10 -6 10 -4 10 -2 0 1 2 Gate Voltage (V) L=0.4 µ m t ox =9 nm V D = 0. 1V I on I off V T Slope = m
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© D.K. Schroder, Semiconductor Characterization MOSFET Current-Voltage Series resistance degrades the MOSFET current ( ) ' ' ' 5 . 0 DS DS T GS D V V V V k I = ( ) ( ) [ ] ( ) ( )( ) SD D DS DS T GS SD D DS SD D DS T S D GS D R I V V V V k R I V R I V V R I V k I = = 5 . 0 5 . 0 ( ) ( ) ( ) SD T GS ox eff eff DS T GS ox eff eff D R V V C W L L V V V C W I + = µ S G D B R S R D V GS V' GS V DS V' DS p L δ L L L = 2 L n + n +
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© D.K. Schroder, Semiconductor Characterization MOSFET Resistance
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This note was uploaded on 05/25/2011 for the course EEE 536 taught by Professor Schroder during the Spring '11 term at ASU.

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06. MOSFETs - MOSFETs Drain Current Effective Channel...

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