ch10_012604 - Embedded Systems Design: A Unified...

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1 Embedded Systems Design: A Unified Hardware/Software Introduction Chapter 10: IC Technology
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2 Embedded Systems Design: A Unified Hardware/Software Introduction, (c) 2000 Vahid/Givargis Outline Anatomy of integrated circuits Full-Custom (VLSI) IC Technology Semi-Custom (ASIC) IC Technology Programmable Logic Device (PLD) IC Technology
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3 Embedded Systems Design: A Unified Hardware/Software Introduction, (c) 2000 Vahid/Givargis CMOS transistor Source, Drain Diffusion area where electrons can flow Can be connected to metal contacts (via’s) Gate Polysilicon area where control voltage is applied Oxide Si O 2 Insulator so the gate voltage can’t leak
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Embedded Systems Design: A Unified Hardware/Software Introduction, (c) 2000 Vahid/Givargis End of the Moore’s Law? Every dimension of the MOSFET has to scale (PMOS) Gate oxide has to scale down to Increase gate capacitance Reduce leakage current from S to D Pinch off current from source to drain Current gate oxide thickness is about 2.5-3nm That’s about 25 atoms!!! source
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This note was uploaded on 06/02/2011 for the course CS 550 taught by Professor Young during the Spring '11 term at New York Institute of Technology-Westbury.

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ch10_012604 - Embedded Systems Design: A Unified...

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