SemiE_field - IEEE TRANSACTIONS ON INSTRUMENTATION AND...

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IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, VOL. IM-26, NO. 3, SEPTEMBER 1977 sufficiently small measurement error (<0.5 percent of the reading). Its principal area of application will be mea- surements of standard current transformers with high secondary rated currents, the errors of which can be de- fined for the first time directly and without a secondary transformer. There will be no interest in using the method also for the determining of errors of commercially available measuring instrument transformers as measurements on these transformers can easily and, with adequate accuracy, be carried out with the aid of the hitherto existing trans- former measuring devices. REFERENCES [1] P. N. Miljanic, N. L. Kusters, and W. J. M. Moore, "The application of current comparators to the calibration of current transformers at ratios up to 36 000/5 amperes," IEEE Trans. Instrum. Meas., vol. IM-17, pp. 196-203,1968. [21 A. H. M. Arnold, "Current-transformer testing," J. Inst. Elec. Eng., vol. 74, pp. 424-444, 1934. [3] W. Hohle, "Eine tragbare Stromwandler-Prufeinrichtung hoher Genauigkeit," Arch. Elektrotechnik, vol. 27, p. 849, 1933. [41 Hartmann and Braun, Wandler- und Burdenme3einrichtung nach dem Differenzverfahren, Typ METH. [5] N. L. Kusters and W. J. M. Moore, "The compensated current com- parator, A new reference standard for current-transformer calibra- tions in industry," IEEE Trans. Instrum. Meas., vol. IM-13, pp. 107-114, 1964. [61 Hartmann and Braun, Kleiner komplexer Wechselstromkompen- sator, Typ EWKW 1. [71 H. J. Kohler, "Prazisions-Wechselspannungsverstarker mit getrennt einstellbarer Gleichspannungsverstiirkung," PTB-Mitt., vol. 86, pp. 427-429, 1976. [81 K. Forger, "Ein Mefprinzip hoher Genauigkeit fur Untersuchungen an Stromwandlern," dissertation, Tech. Univ. Braunschweig, Braunschweig, Germany, 1953. New Method for Measurement of Electric-Field Distribution on Semiconductors SHIRO SAKAI, MASUO FUKUI, TADAMITSU IRITANI, AND OSAMU TADA Abstract-New electric-field measuring equipment was con- structed. The electric-field distribution was obtained from po- tential distribution measured by a single capacitive probe through numerical calculation by a microcomputer. The single capacitive probe was fabricated with the technique of vacuum evaporation of aluminum and SiO. The electric-field distribution under ac- oustoelectric current oscillated state in CdS was measured. The electric-field distribution measured by the present method was compared with that obtained by the time derivative of potential. I. INTRODUCTION ,ROBE MEASUREMENT of the electric-field dis- tribution resolves various dynamic properties in semiconductors. Several authors have reported on the method for measurement as classified in the following.
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