Test_Solns_2006

Test_Solns_2006 - EEE 352 Fall 2006 Test 2 - Solutions 1. A...

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EEE 352 – Fall 2006 Test 2 -- Solutions 1. A Si p-n junction is measured to have a built-in potential of 0.9542 V and a junction depletion width of 0.113 µ m. What are N D and N A in the n- and p-type regions, respectively? The n-type region is the heavier doped of the two. From the junction built-in voltage equation, we can find the product N D N A as: 6 36 20 2 2 10 0 . 1 0259 . 0 9542 . 0 exp 10 exp ln × = = = = cm T k eV n N N n N N T k eV B bi i A D i A D B bi From the junction width, we can find the sum of the two dopants as: 3 19 2 10 0 . 1 2 2 × = = + + = cm V eW N N N N N N N N e V W bi A D A D A D A D bi ε We can now solve these two equations together to find: 3 17 3 19 10 0 . 1 10 0 . 1 × = × = cm N cm N A D . 2. An n-channel MOSFET has an oxide thickness of 5 nm, oxide dielectric constant of 3.8, Z/L g = 20, e =500 cm 2 /Vs, and V T = 0.1 V.
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This note was uploaded on 04/04/2008 for the course EEE 352 taught by Professor Ferry during the Fall '08 term at ASU.

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Test_Solns_2006 - EEE 352 Fall 2006 Test 2 - Solutions 1. A...

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