Work_sheet(110526-Experiment title)

Work_sheet(110526-Experiment title) - /square =4~4.5 x 10-4...

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date : 2009. 08. 10. Processes Cleaning p-layer i-layer n-layer Operator Ai Ai Ai Remarks Experiment : ITO cell ( , ) Substrate : n-type Ȇ· wafer (2~3ohm.cm) Front TCO RIE etching Front electrode Back electrode Ultra- Sonic RCA 1,2 2. Front p- layer (3:21:9, 100mTorr, 10W, 200 , 6cm, 5min, 7nm) a-si HF(1%) 3min Iodine 5sec 1. Front i- layer (15:75, 400mT, 200 , 5W, 2cm, 1min 30sec 5nm) 3. Back i-layer (15:75, 400mT, 200 , 5W, 2cm, 1min 30sec 5nm) 3. Back n-layer (5:45:5, 200mTorr, 30W, 200 , 4cm, 5min, 7nm) a-Si HF(1%) 1min30sec Carrier Lifetime/Implie d Voc Lifetime 1700 ~3000 Voc 680mV~700mV 1. 3cm, 80W, 2~3 mtorr, Ar=20 sccm, Temp=200°C Thickness=100nm Rsh=40~45
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Unformatted text preview: /square =4~4.5 x 10-4 -cm Voc : RIE -660, -620mV FF : 55 2. 3cm, 30W, 2~3 mtorr, Ar=20 sccm, Temp=200C Thickness=100nm Rsh=70 /square = 7 x 10-4 -cm Voc : RIE -650, FF :30 3. 3cm, 150W, 2~3 mtorr, Ar=20 sccm, Temp=200C Thickness=100nm Rsh=60~65 /square = 6~6.5 x 10-4 -cm Voc : RIE -650, FF :~30 4. 2.5cm, 80W, 2~3 mtorr, Ar=20 sccm, Temp=200C Thickness=100nm Rsh=40~45 /square =4~4.5 x 10-4 -cm Voc : RIE -650, FF :40~45 Eva (Ag/Al) Eva (Al)- 9 - ( < * 9 ( < * & 9 FF -B6ITO define - ITO *...
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This note was uploaded on 06/16/2011 for the course ECON 101 taught by Professor Jung during the Spring '11 term at Yonsei University.

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