ECE 315 Homework 4 Due 11:15am, Sept. 21, 2007 in the drop box 1. (Bipolar transistor operating regions) For the following silicon BJT conditions, state the operating region (a) NPN with V BE = 0.7V and V CE = 0.0V in common-emitter notation. (2 pts) (b) NPN with V BE = 0.9V and V CE = 2.0V in common-emitter notation. (2 pts) (c) NPN with V BC = 0.7V and V EC = − 2.0V in common-collector notation. (2 pts) (d) NPN with V EB = 0.3V and V CB = 2.0V in common-base notation. (2 pts) (e) PNP with V BE = − 0.9V and V CE = − 2.0V in common-emitter notation. (2 pts) (f) PNP with V EB = 0.9V and V CB = − 2.0V in common-base notation. (2 pts) 2. (Large-signal and small-signal BJT models) For a NPN BJT, (a) Draw the large-signal Ebers-Moll model with the current gain parameters of α F and R (pay attention to the direction of the dependent current source) (5 pts) (b) If we have designed the BJT with a large current gain by N E >>N B >>N C and W B <<L n , denote the main current components (in terms of electron-hole drift-diffusion-
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