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Summary Unit6 - o Tetrahedral but don’t sit in any long...

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Unit 6: Thermal Oxidation SiO2 in increasing thickness, deposition is faster to grow but lower quality o Native o Gate: almost always grown, needs precise thickness control (V th ) o Pad: using silicon nitride (generates stressed which could cause dislocations), line with pad oxide; compressive stresses to cancel out silicon nitride ones o Masking/screen: in implantation, almost always deposition of oxide, oxidation process is high metal temp so can’t grow o Field: to isolate electrical components; can do either STI (deposit) or LOCOS (grow) o Back end: provide insulation btwn diff layers of metalization SiO2 is amorphous (not ordered) even though it grows on crystalline substrate
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Unformatted text preview: o Tetrahedral but don’t sit in any long range order o When convert silicon to silicon oxide, need to account for diff geometry • C=ε o ε A/d oxide o After a certain thickness decreases reached, will have pinholes and tunnelling (~2nm) o Could use high dielectric constant material High k materials have k>k silicon = 3.9, Hf oxides k~20 • Increase in size 30% in each direction when Si SiO2 (2.2 increase in size) o Silicon oxide confined in lateral direction so can only grow in vertical direction, must also accommodate volume change, can’t change in x and z orientation, means more stress...
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