This preview shows page 1. Sign up to view the full content.
Unformatted text preview: o Tetrahedral but dont sit in any long range order o When convert silicon to silicon oxide, need to account for diff geometry C= o A/d oxide o After a certain thickness decreases reached, will have pinholes and tunnelling (~2nm) o Could use high dielectric constant material High k materials have k>k silicon = 3.9, Hf oxides k~20 Increase in size 30% in each direction when Si SiO2 (2.2 increase in size) o Silicon oxide confined in lateral direction so can only grow in vertical direction, must also accommodate volume change, cant change in x and z orientation, means more stress...
View Full Document
This note was uploaded on 07/18/2011 for the course NE 343 taught by Professor Aziz during the Spring '11 term at Waterloo.
- Spring '11