12.Ssd (EE-2080)_Lecture12 [Compatibility Mode]

12.Ssd (EE-2080)_Lecture12 [Compatibility Mode] - SDM(EE...

Info iconThis preview shows pages 1–7. Sign up to view the full content.

View Full Document Right Arrow Icon
DM(EE- 080) SDM(EE 2080) Lecture 12 Dr. Shiv Govind Singh sgsingh@iith.ac.in gg @ Assistant Professor Electrical Engineering Semester 2, Y-2010/11
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Reference Text Book: hysics of Semiconductor Devices MS ze John Wiley & Sons (1981) 1. Physics of Semiconductor Devices, S. M. Sze , John Wiley & Sons (1981). 2. Solid State Electronics by Ben G. Streetman and Sanjay Banerjee , Prentice Hall International , Inc. Semiconductor Physics and Devices Donald A Neamen Tata Mcgraw 3. Semiconductor Physics and Devices, Donald A. Neamen, Tata Mcgraw- Hill Publishing company Limited. Reference Book: 1 . Fundamentals of Solid-State Electronic Devices, C. T. Sah , Allied Publisher and World Scientific, 1991. 2. Complete Guide to Semiconductor Devices, K. K. Ng , McGraw Hill, 1995. 3. Solid state physics, Ashcroft & Mermins. 4. Introduction to Solid State Electronics, E. F. Y. Waug , North Holland, 1980.
Background image of page 2
Recap - Diagram vs Band Diagram E K Diagram vs Band Diagram • Fermi level in intrinsic semiconductor
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
utline Outline • Electrons and Holes in Extrinsic Semiconductor • Degenerate and Nondegenerate
Background image of page 4
Intrinsic carrier concentration Product of n 0 and p 0 kT E E v F ) ( = N c (/cm 3 ) (10 18 ) N v (/cm 3 ) (10 18 ) * n m * p m v o e N p kT E E F c ) ( = Si 28 10.4 1.08 .56 e o m o m c o e N n kT E E c kT E E v o o F c v F e N e N p n = ) ( ) ( Ge 10.9 6 .55 .37 GaAs .47 7 .067 .48 kT E c v kT E E c v o o g v c e N N e N N p n = = ) ( E g (eV) Concentrat ion (/cm 3 ) 300K Concentrati on (/cm 3 ) 400K Where E is band gap, o o kT E c v i p n e N N n g = = 2 Si 1.12 1.510 10 ~10 13 Ge .72 2.4X10 13 ~10 16 g gp , At equilibrium n o =p o =n i n i depends upon temperature and band gap GaAs 1.42 1.8X10 6 - SiC 3.5 10 100
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Thermal Equilibrium Concentration of Electrons and Holes in Extrinsic Semiconductor + = kT E E E E N n Fi F
Background image of page 6
Image of page 7
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 07/19/2011 for the course EE 211 taught by Professor Sgsingh during the Spring '11 term at IIT Kanpur.

Page1 / 18

12.Ssd (EE-2080)_Lecture12 [Compatibility Mode] - SDM(EE...

This preview shows document pages 1 - 7. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online