31.SSD(EE-2080)L31_29march

31.SSD(EE-2080)L31_29march - Punch‐through Base Width...

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SSD(EE-2080) Lecture 31 Dr. Shiv Govind Singh [email protected] Assistant Professor Electrical Engineering Semester 2, Y-2010/11
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Reference Text Book: 1. Physics of Semiconductor Devices, S. M. Sze , John Wiley & Sons (1981). 2. Solid State Electronics by Ben G. Streetman and Sanjay Banerjee , Prentice Hall International , Inc. 3. Semiconductor Physics and Devices, Donald A. Neamen, Tata Mcgraw-Hill Publishing company Limited. Reference Book: Semiconductor Device Fundamental R. Pirret
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Carrier Distribution in Base
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Current in Collector Jp,c = [ ]
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I-V Characteristics
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Ebers Moll Model
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Common Base Configuration
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Common Emitter Configuration
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Current Gain
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Current Gain
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How to make Good BJT For a given Emitter length Short Base Low Base Doping than Emitter Material
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Doping for Gain
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Problem of Low Base Doping: Current Crowding
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Unformatted text preview: Punch‐through Base Width Modulation Early Voltage Problem of Low Base Doping: Punch‐through Problem of low Base‐doping: Base Width Modulation Problem of Low Base‐doping: Early Voltage V a Punch Through Early effect Collector Doping Problems of classical transistor • Emitter doping: As high as possible without band gap narrowing • Base doping: As as possible without NE low possible, current crowding, Early effect • Collector Lower doping: than base doping without Kirk Effect • Base Width : As thin as possible without punch through How to make better Transistor Graded Base transport Polysilicon Emitter Heterojunction Bipolar Transistor Classical Shockley Transistor Poly‐silicon Emitter Poly‐silicon Emitter Gain in Poly‐silicon Transistor Short‐base Quasi‐ballistic Transistor Gain…...
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This note was uploaded on 07/19/2011 for the course EE 211 taught by Professor Sgsingh during the Spring '11 term at IIT Kanpur.

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31.SSD(EE-2080)L31_29march - Punch‐through Base Width...

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