36.SSD(EE-2080)L36_14april

36.SSD(EE-2080)L36_14april - (Potential, field and charge)...

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SSD(EE-2080) Lecture 36 Dr. Shiv Govind Singh sgsingh@iith.ac.in Assistant Professor Electrical Engineering Semester 2, Y-2010/11
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Reference Text Book: 1. Physics of Semiconductor Devices, S. M. Sze , John Wiley & Sons (1981). 2. Solid State Electronics by Ben G. Streetman and Sanjay Banerjee , Prentice Hall International , Inc. 3. Semiconductor Physics and Devices, Donald A. Neamen, Tata Mcgraw-Hill Publishing company Limited. Reference Book: Semiconductor Device Fundamental R. Pirret MOSFET Physics, Trisvid
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Band Diagram under Bias
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Response Time Dielectric Relaxation SRH Recombination-Generation
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Charges and Surface Potential
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Solution x n qD pE q J x n qD nE q J p p n n
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Depletion Approximation
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Unformatted text preview: (Potential, field and charge) Surface Potential Gate voltage in Depletion region Gate Voltage and Depletion Charge Threshold for Inversion What happens when surface potential is 2φ F ? Scaling Reduce Vth by Reducing oxide thickness (from 1000 A in 1970s to 10 A now) Increase dielectric constant(SiO2historically, HfO2now in Intel Penryn) Induced charges below Threshold Charges below Threshold Charges above Threshold Charge Build-up Above Threshold Small changes ψs in changes a lot Change in changes , because Eox=Qi/κ0e0 Voxis large because V ox =E ox x ,i.e. most of the drop above 2ψ F goes to Vox. Acts like a parallel plate capacitor Tunneling Current...
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This note was uploaded on 07/19/2011 for the course EE 211 taught by Professor Sgsingh during the Spring '11 term at IIT Kanpur.

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36.SSD(EE-2080)L36_14april - (Potential, field and charge)...

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