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Unformatted text preview: /dx, we can write L D is the extrinsic Debye length given Positive sign holds for y > 0 (bands bending downwards), and the negative sign holds for y < 0. Cont. The electric field at the surface Es is given by Using Gauss' law, the total charge Q S in the semiconductor is given by MOS capacitor under the different biasing conditions (c) Depletion (0 < y s < 2 f B ) (d) Inversion ( y s > 2 f B ) Voltage using the Accurate Solution Gate voltage V G of the ideal MOS capacitor = 1 Graph of y s versus V G for Na = 1x10 16 cm−3 and x = 25 nm Surface charge and potential using the Accurate Solution Small Signal Capacitance and Equivalent Circuit Junction Capacitance Cont. Junction Capacitance in accumulation Junction Capacitance in depletion Junction Capacitance in Inversion High frequency response in MOSC Ideal vs. Real CV Characteristics...
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This note was uploaded on 07/19/2011 for the course EE 211 taught by Professor Sgsingh during the Spring '11 term at IIT Kanpur.
 Spring '11
 sgsingh
 Electrical Engineering

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