ECE340_Summ2011_HW1 - 2 4. The bonding model for GaAs is...

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ECE 340 HW Assignment 1 Summer 2011 1 ECE 340 Homework Assignment 1 Due: Monday June 20 th , 2011 1. Solve part (a) and (b) in terms of the lattice constant “a” (a) What is the distance between nearest-neighbor atoms in a diamond structure (e.g. Silicon) (b) What is the distance between nearest-neighbor Gallium atoms in the zinc-blende structure of GaAs 2. Given a cubic lattic, indicate how many equivalent planes [parts (a) to (c)] or equivalent directions [parts (d) to (f)] are associated with each of the following designations: (a) {100} (b) {110} (c) {111} (d) <100> (e) <110> (f) <111> 3. Using the energy band model for a semiconductor, indicate how one visualizes: (a) An electron (b) A hole (c) Donor sites (d) Acceptor Sites (e) Freeze-out of majority carrier electrons at donor sites as the temperature is lowered toward 0K (f) Freeze-out of majority carrier holes at acceptor sites as the temperature is lowered toward 0K
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ECE 340 HW Assignment 1 Summer 2011
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Unformatted text preview: 2 4. The bonding model for GaAs is pictured in Figure 1. (a) Draw the bonding model for GaAs depicting the removal of the shaded Ga and As atoms in Figure 1 . HINT: Ga and As take their bonding electrons with them when they are removed from the lattice. Also see Figure 2 showing the results of removing an atom from the Si lattice. (b) Redraw the bonding model for GaAs showing the insertion of Si atoms into the missing Ga and As atom sites. (c) Is the GaAs doped p-type or n-type when Si atoms replace Ga atoms? Explain. (d) Is the GaAs doped p-type or n-type when Si atoms replace As atoms? Explain. (e) Draw the energy band diagram for GaAs when GaAs is doped with Si on (i) Ga sites and (ii) on As sites. Include Fermi, intrinsic, conduction and valence energy levels. Figure 1: Bonding Model for GaAs lattice. (Shaded atoms are to be removed). Figure 2: Result of removing an Si atom from the Si lattice structure....
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This note was uploaded on 07/27/2011 for the course ECE 340 taught by Professor Leburton during the Spring '11 term at University of Illinois, Urbana Champaign.

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ECE340_Summ2011_HW1 - 2 4. The bonding model for GaAs is...

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