EEE 3308C Spring 2011 HW4

EEE 3308C Spring 2011 HW4 - voltage of 3V, find the...

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Homework 4 Due February 23 P4.1) A MOSFET is fabricated using a process technology with 25 angstrom thick oxide, ± =3.9, n = 300 cm 2 /Vs, and a minimum channel length of 0.1 micron. a) Find C ox . b) Compute the process transconductance parameter. c) If a MOS capacitor is made with a square planar area of 1 micron x 1 micron in this process, determine its capacitance. P4.2) Using the same process technology as in P6.1), consider a MOSFET with 2 micron width and minimum channel length. If the overdrive voltage is 1.5V and a small V DS is applied such that the operation is in the linear region, determine the linear resistance, r DS . P4.3) Using the same process technology as in P6.1), consider a MOSFET with 20 micron width and 1 micron channel length. If the MOSFET is operated in the saturation region with an overdrive
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Unformatted text preview: voltage of 3V, find the saturation drain current. P4.4) Using the same overdrive voltage as in P6.3) and the same process technology, how can the saturation current be increased by a factor of 50? By a factor of 1000? Hint: Multiple possible answers. P4.5) An n-channel MOSFET is fabricated in the same process technology with (W/L = 10). The threshold voltage is determined to be -0.7V. a) Is this an enhancement mode or a depletion mode device? b) If the source and body are grounded, VG=3V, and VD=1V, what is its region of operation? c) If the source and body are grounded, VG=2V, and VD=3V, what is its region of operation? P4.6) Plot the ID-VDS characteristic from VDS=0V to VDS=2.2V for a n-channel MOSFET fabricated in the same process technology with (W/L = 8), VT=0.6V, and VGS=1V....
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