Unformatted text preview: voltage of 3V, find the saturation drain current. P4.4) Using the same overdrive voltage as in P6.3) and the same process technology, how can the saturation current be increased by a factor of 50? By a factor of 1000? Hint: Multiple possible answers. P4.5) An n-channel MOSFET is fabricated in the same process technology with (W/L = 10). The threshold voltage is determined to be -0.7V. a) Is this an enhancement mode or a depletion mode device? b) If the source and body are grounded, VG=3V, and VD=1V, what is its region of operation? c) If the source and body are grounded, VG=2V, and VD=3V, what is its region of operation? P4.6) Plot the ID-VDS characteristic from VDS=0V to VDS=2.2V for a n-channel MOSFET fabricated in the same process technology with (W/L = 8), VT=0.6V, and VGS=1V....
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- Spring '11
- channel length, n-channel mosfet, P6.1, micron width