EEE 3308C Spring 2011 HW4_solution

EEE 3308C Spring 2011 HW4_solution - P4.4 Using the same...

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Homework 4 Due February 23 P4.1) A MOSFET is fabricated using a process technology with 25 angstrom thick oxide, =3.9, n = 300 cm 2 /Vs, and a minimum channel length of 0.1 micron. a) Find C ox . b) Compute the process transconductance parameter. c) If a MOS capacitor is made with a square planar area of 1 micron x 1 micron in this process, determine its capacitance. P4.2) Using the same process technology as in P4.1), consider a MOSFET with 2 micron width and minimum channel length. If the overdrive voltage is 1.5V and a small V DS is applied such that the operation is in the linear region, determine the linear resistance, r DS .
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P4.3) Using the same process technology as in P4.1), consider a MOSFET with 20 micron width and 1 micron channel length. If the MOSFET is operated in the saturation region with an overdrive voltage of 3V, find the saturation drain current.
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