S 2011 Design and Experiment Project Lab 5 BJT

S 2011 Design and Experiment Project Lab 5 BJT -...

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Common-Emitter Amplifier EEE 3308C Spring 2011 1 EEL 3308C – Design and Experiment Project Lab #5 Common-Emitter Amplifier 1. Objectives This project teaches the design of a BJT amplifier. The use of simulation (via LTSpice) as an integral part of the design methodology and is also emphasized. 2. Prelab Week 1 (3/28 – 4/8) (Note: This lab has two Pre-labs, one before each week.) Note that prelab work is considered an integral part of preparing for the lab. Not putting effort in the pre- lab is usually correlated to difficulty in successfully achieving the lab goals during the allotted time. (2a) In lecture, we began our exploration of the bipolar junction transistor (BJT). Although the device physics is quite different, we take advantage of the strong circuit analogy between the BJT and the MOSFET. Hence, the purpose of Week 1 is to explore the similarities and differences between the BJT and MOSFET. Here, consider the 3-terminal BJT as analogous to the 3-terminal MOSFET. The BJT base terminal is analogous to the MOSFET gate; the BJT emitter terminal is analogous to the MOSFET source; and the BJT collector is analogous to the MOSFET drain. Similar to the MOSFET which has n-channel and p-channel varieties, the BJT occurs in two forms, N/P/N BJT which is shown below and the P/N/P BJT form (not shown). The key differences arise from the different physical structure of the BJT compared to the MOSFET. While the gate voltage in the MOSFET controls the conductivity between the drain and source terminals through the applied electric field, the base (B) current in the BJT controls the current flow between the emitter (E) and collector (C) of the BJT through a device physics mechanism known as the minority carrier recombination (See Section 6.1 in Sedra and Smith). As discussed in Chapter 6, the BJT consists of two P/N junctions connected by a thin base (B) layer. Due to the P/N origin of the base/collector and base/emitter junctions, it is not surprising that the collector current has a form similar to the P/N junction current: ± ² ³ ´ µ ·¸ ¹ º Analogous to the MOSFET which is biased in saturation for amplification, the BJT must be biased in the ‘active’ mode for amplification. The BJT active mode occurs when the base/emitter P/N junction is forward biased and the base/collector P/N junction is reverse-biased . C E B D S G I G =0 I S I D =I S I B ≠0 I E =I C + I B » ¼ ² ½ ½ ¾ ¿ » À » ¼ ² Á» À I C =βI B
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Common-Emitter Amplifier EEE 3308C Spring 2011 2 (2b) Obtain a copy of a Phillips 2N2222/2N2222A NPN Transistor data sheet. (PRE-LAB WEEK 1) TO TURN IN TO YOUR TA ON A SEPARATE SHEET (2c) From the Phillips 2N2222/2N2222A datasheet list, write down the following information: (2c.1) Package type (2c.2) Write down the pin number corresponding to the emitter, base, and collector pins. How do you identify pin 1? The following questions refer to maximum or limiting operating conditions.
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This note was uploaded on 07/28/2011 for the course EEL 3308C taught by Professor Yoon during the Spring '11 term at University of Florida.

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S 2011 Design and Experiment Project Lab 5 BJT -...

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