11+PN+non-ideal - PN Junction in Forward Bias (VA>0)...

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PN Junction in Forward Bias (V A >0) Current flow is proportional to e (qV A /kT) due to the exponential increase of carriers in the majority carrier bands
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PN Junction in Reverse Bias (V A <0) Reverse current caused by minority carriers being swept away by E , and independent of the size of V A
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Ideal Diode, I-V -x P x N x’ x” J n (x”) J p (x’) () 1 / 2 2 + = kT qV D i P P A i N N A e N n L D N n L D qA I ( ) 1 / 0 = kT qV A e I I -I 0 I V a 1 ) 0 ' ( ) 0 " ( / 2 2 + = = + = = kT qV D i P P A i N N p n A e N n L D N n L D q x J x J J No R-G inside depletion region Ideal diode equation I 0 = Reverse saturation current
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EECS 320 P-N Diode: Non-Ideal Characteristics
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Actual Diode, I-V Reverse bias “breakdown” ( ) 1 / 0 = kT qV A e I I
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Actual Diode, I-V ( ) 1 / 0 = kT qV A e I I A V kT q I I × + = / ln ln 0
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R-G In Depletion Region In forward bias, injected carriers recombine in depletion region In reverse bias, carriers generated in depletion region E V E C E fn E fp E V E C E fn E fp How does the I-V relation of the diode change if R-G in depletion region is accounted for?
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11+PN+non-ideal - PN Junction in Forward Bias (VA&gt;0)...

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