14+MOS - Last Lecture: Metal-Semiconductor Junction M >...

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Last Lecture: Metal-Semiconductor Junction φ M < φ S , n-type (Ohmic) φ M > φ S , n-type E vac qV bi E vac qV bi () + = = f C M S M bi E E q V 1 χ φ E C E V q χ q φ M q φ B q φ M q χ E C E V φ M > φ S , p-type (Ohmic) φ M < φ S , p-type E vac E vac qV bi qV bi E C E V q χ q φ M q χ E C q φ M E V D bi S d qN V x W ε 2 =
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Schottky Diode Current V A > 0, J MS < J SM V A = 0, J MS = J SM E C E V E FS E FM E C E V V A < 0, J MS > J SM = 1 exp kT n qV J J a S 1 . 1 0 . 1 n E C E V E FS E FM = kT q T A J B S φ exp 2 * Current flow is due to majority carriers through thermionic emission process
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EECS 320 Metal-Oxide-Semiconductor
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Transistor Goal: Control output with small input Analogy: Valve controls water flow Valve Controls Flow “Off” Input controls aperture Output = water flow “On” Water flow = electron or hole current Valve = channel conductance controlled by electric field Electronics analogy
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Field Effect Transistor Terminals Gate Controls conductance of channel through application of electric field Source Drain Provides carriers Collects carriers E Variable channel SD Control source to drain current with gate voltage
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FET Materials Can you make a transistor out of a metal?
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This note was uploaded on 08/09/2011 for the course EE 320 taught by Professor Zhongzhaohui during the Summer '11 term at Shanghai Jiao Tong University.

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14+MOS - Last Lecture: Metal-Semiconductor Junction M &gt;...

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