Handout+7+Key+Concepts+of+MOS+Device+Physics

Handout+7+Key+Concepts+of+MOS+Device+Physics - Lecture Key...

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1 Lecture Key Concepts of MOS Device Physics Dr. Vincent Chang Copyright The course contents are protected under the copyright laws of the United States and other countries. This course is designated for personal use only and all intellectual property rights of such course contents are reserved by Knowledge Master, Inc. Any distributing, copying or public performance of such course contents, including PowerPoint slides, handout, video and audio sound-track, is Dr. Vincent Chang strictlyp rohibited and may subject theoffender to severe criminal penalties. (Title 17, United State Code, Section 501 & 506) Copyright © by Knowledge Master, Inc.
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2 Outline Introduction to N-enhancement Introduction to FETs •MOSFET •S i JFET •GaAs MESFET N enhancement MOSFET • Device structure • Threshold voltage • Field-effect I-V characteristic • Voltage- controlled resistance • Triode • Boundary Dr. Vincent Chang • Saturation • SPICE simulation Enhancement MOSFET Gate Drain Source Dr. Vincent Chang Body
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This note was uploaded on 08/09/2011 for the course EE 312 taught by Professor Vicentchang during the Fall '10 term at Shanghai Jiao Tong University.

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Handout+7+Key+Concepts+of+MOS+Device+Physics - Lecture Key...

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